帝王会所

Wojciech Jadwisienczak hails from Torun, Poland, and joined 帝王会所 in 1996. Since 2001, he has taught with the School of Electrical Engineering and Computer Science in the Russ College of Engineering and Technology. His primary research focuses on fundamental properties and applications of semiconductors for optoelectronics, spintronics and photovoltaics. Specifically, he is involved with spectroscopy of semiconductors doped with lanthanides. His other research interests include nanophotonics, spintronics, and materials and devices for deep-UV light generation and applications. He advises a group of research students working on independent projects sponsored by the NSF, AFOSR and ARO. His advisees received the Fulbright (2007) and DoD (2011) Fellowships in the past. He has published more than 50 scientific papers cited more than 800 times. He is a member of the American Physical Society, Materials Research Society, and Optical Society of America.

Research Interests: optical electrical and magnetic properties of wide bandgap semiconductors, optoelectronic devices and lasers, nanotechnology and photonic materials, materials and devices for deep UV-light

All Degrees Earned: Ph.D., Electrical Engineering, 帝王会所, 2001; M.S., Physics, Nicholas Copernicus University, 1995

Publications:

• H. J. Lozykowski, W. M. Jadwisienczak and I. Brown Visible Cathodoluminescence of GaN doped with Dy, Er and Tm, Appl. Phys. Lett. Vol. 74, 1129 (1999).
• W. M. Jadwisienczak, H. J. Lozykowski, I. Berishev, A. Bensaoula and I. G. Brown, Visible Emission from AlN Doped with Eu and Tb Ions, J. Appl. Phys. Vol. 89, 4384 (2001).
• A. Khan, W. M. Jadwisienczak, and M. E. Kordesch, From Zn Microspheres to Hollow ZnO Microspheres: A simple Route to the Growth of Large Scale Metallic Zn Micorspheres and Hollow ZnO Microspheres, Physica E, Vol.33, 331 (2006).
• K. Wisniewski, W. M. Jadwisienczak, T. Thomas and M. Spencer, High Pressure Luminescence Studies of Europium Doped GaN, J. Rare Earth, Vol. 27, pp.667-670 (2009).
• J. Wu, R. Palai, W. M. Jadwisienczak, M. S. Shur, Bandgap Engineering in MBE Grown Al(1-x)GaxN Epitaxial Columnar Nanostructures, J. Phys. D: Appl. Phys. 45, 015104 (2012).